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| Specification Comparison Vishay Siliconix Si3850ADV vs. SI3850DV Description: Package: Pin Out: Complementary MOSFET Half-Bridge (N- and P-Channel) TSOP-6 Identical Part Number Replacements Si3850ADV-T1-E3 Replaces SI3850DV-T1-E3 Si3850ADV-T1-E3 Replaces SI3850DV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TA = 25 C Continuous Drain Current TA = 70 C Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Power Dissipation TA = 25 C TA = 70 C IDM IS PD Tj and Tstg RthJA ID VDS VGS Symbol N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Si3850ADV 20 - 20 12 12 1.4 - 0.96 1.1 - 0.77 3.5 - 2.0 0.9 - 0.9 1.08 0.7 - 55 to 150 115 Si3580DV 20 - 20 12 12 1.2 - 0.85 0.95 - 0.65 3.5 - 2.5 1 -1 1.25 0.8 - 55 to 150 100 W C C/W A V Unit Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Document Number: 73853 Revision: 31-Oct-06 www.vishay.com 1 Specification Comparison Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current VGS = 4.5 V VGS = - 4.5 V VGS = 4.5 V VGS = - 4.5 V VGS = 3.0 V VGS = - 3.0 V VGS(th) IGSS IDSS ID(on) N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Ch 0.6 - 0.6 1.5 - 1.5 100 100 1 -1 0.6 - 0.6 1.5 - 1.5 100 100 1 -1 V nA A A 0.38 0.7 0.55 1.1 2.7 1.2 0.500 1.0 0.750 1.3 Symbol Si3850ADV Min Typ Max Min SI3850DV Typ Max Unit 3.0 - 1.5 0.240 0.510 0.325 0.780 1.8 1.1 0.87 - 1.0 0.95 1.10 0.22 0.28 0.24 0.26 3.5 10.5 8 13 16 34 20 18 9 18 20 25 0.300 0.640 0.410 0.980 3.0 - 2.0 Drain-Source On-Resistance rDS(on) Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Switchinga gfs VSD S 1.2 - 1.2 V 1.2 - 1.3 1.4 1.7 0.8 1.10 0.25 0.5 0.2 0.2 0.3 3 10 8 20 20 20 10 16 8 40 40 Qg Qgs Qgd Rg 2.0 2.5 nC 5.3 16 14 20 25 50 30 30 15 30 30 40 1.5 16 20 15 40 40 40 20 30 15 80 80 td(on) Turn-On Time tr td(off) Turn-Off Time tf Source-Drain Reverse Recovery Time trr ns Specification comparisons are supplied as a courtesy to compare two devices and do not constitute a commercial product datasheet or any guarantee of identical performance. Designers should refer to the appropriate datasheets of the same number for guaranteed specification limits. www.vishay.com 2 Document Number: 73853 Revision: 31-Oct-06 |
Price & Availability of SI3850DV
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